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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleTSM900N06CW RPG
TSM900N06CW RPG Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

TSM900N06CW RPG - Taiwan Semiconductor Corporation

Manifakti Nimewo Pati
TSM900N06CW RPG
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-TSM900N06CW RPG
ECAD modèl
Pati Deskripsyon
MOSFET N-CHANNEL 60V 11A SOT223
Deskripsyon detaye
Pake
TO-261-4, TO-261AA
Done fèy
TSM900N06 ~.pdf
RoHs Status
Nan stok: 118710

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Espesifikasyon

Espesifikasyon TSM900N06CW RPG Tech
Taiwan Semiconductor Corporation - TSM900N06CW RPG espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Taiwan Semiconductor Corporation - TSM900N06CW RPG

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Vgs (th) (Max) @ Id 2.5V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-223  
Seri -  
Rds Sou (Max) @ Id, Vgs 90mOhm @ 6A, 10V  
Dissipasyon pouvwa (Max) 4.17W (Tc)  
Pake / Ka TO-261-4, TO-261AA  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 500 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 11A (Tc)  
Nimewo pwodwi baz TSM900  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Taiwan Semiconductor Corporation TSM900N06CW RPG.

Pwodwi atribi TSM900N06CW RPG TSM850N06CX RFG TSM80N950CP TSM80N1R2CP
Nimewo Pati TSM900N06CW RPG TSM850N06CX RFG TSM80N950CP TSM80N1R2CP
Manifakti Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 4V @ 250µA 4V @ 250µA
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs (Max) ±20V ±20V ±30V ±30V
Kapasite Antre (Ciss) (Max) @ Vds 500 pF @ 15 V 529 pF @ 30 V 691 pF @ 100 V 685 pF @ 100 V
Founisè Aparèy pake SOT-223 SOT-23 TO-252, (D-Pak) TO-252, (D-Pak)
Nimewo pwodwi baz TSM900 TSM850 TSM80 TSM80
Kouran - Kontini Drain (Id) @ 25 ° C 11A (Tc) 3A (Tc) 6A (Tc) 5.5A (Tc)
Dissipasyon pouvwa (Max) 4.17W (Tc) 1.7W (Tc) 110W (Tc) 110W (Tc)
Drenaj Sous Voltage (Vdss) 60 V 60 V 800 V 800 V
Pòtay Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V 9.5 nC @ 10 V 19.6 nC @ 10 V 19.4 nC @ 10 V
Rds Sou (Max) @ Id, Vgs 90mOhm @ 6A, 10V 85mOhm @ 2.3A, 10V 950mOhm @ 3A, 10V 1.2Ohm @ 2.75A, 10V
FET Feature - - - -
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 10V 10V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pake / Ka TO-261-4, TO-261AA TO-236-3, SC-59, SOT-23-3 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri - - - -

TSM900N06CW RPG fich PDF

Download TSM900N06CW RPG PDF fich ak dokiman Taiwan Semiconductor Corporation pou TSM900N06CW RPG - Taiwan Semiconductor Corporation.

Fich
TSM900N06 ~.pdf

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32D-TSM900N06CW RPG

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